Gallium Nitride Stocks List

Related ETFs - A few ETFs which own one or more of the above listed Gallium Nitride stocks.

Gallium Nitride Stocks Recent News

Date Stock Title
Nov 2 QRVO What Moved Markets This Week
Nov 1 QRVO Why Qorvo Stock Tanked This Week
Nov 1 NVTS The Bottom Fishing Club - Navitas: Deep Value Leverage On AI/EV/Solar Growth
Nov 1 LRCX Stocks that hedge funds moved from long to short in August - Jefferies
Nov 1 QRVO Upgrading Qorvo To A Buy: Time To Restart The Engine
Oct 31 QRVO These are the S&P 500’s biggest laggards for October, down by as much as 29%
Oct 31 LRCX Here is What to Know Beyond Why Lam Research Corporation (LRCX) is a Trending Stock
Oct 31 NVTS Navitas Showcases World’s First 8.5kW AI Data Center Power Supply Using GaN & SiC at China’s Premier Power Electronics Conference
Oct 31 QRVO Qorvo Second Quarter 2025 Earnings: Revenues Beat Expectations, EPS Lags
Oct 31 LRCX Jim Cramer on Lam Research Corporation (LRCX): ‘So The Answer Is I Would Buy It’
Oct 31 WOLF Wolfspeed, Inc. (WOLF): Institutional Investors Are Shorting This Semiconductor Stock Now
Oct 30 QRVO S&P 500 Gains and Losses Today: Supermicro Stock Dives as Accounting Firm Resigns
Oct 30 LRCX Lam Research Corporation (LRCX): Institutional Investors Are Shorting This Semiconductor Stock Now
Oct 30 QRVO Qorvo stock plunges on weak guidance
Oct 30 QRVO Qorvo Shares Plunge 27%: Is This the Beginning of the End for Their Smartphone Empire?
Oct 30 QRVO Qorvo Stock Plummets After Chipmaker Posts Surprise Loss, Warns of Slump
Oct 30 WOLF Wolfspeed, Inc. (WOLF) Struggles with Profitability Amid Market Challenges
Oct 30 QRVO Why Qorvo (QRVO) Stock Is Falling Today
Oct 30 QRVO Do Fund Managers Love Or Hate Qorvo, Inc. (QRVO)?
Oct 30 QRVO Why Qorvo Stock Just Crashed 25%
Gallium Nitride

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.

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