Flash Memory Stocks List

Recent Signals

Date Stock Signal Type
2020-01-17 DGLY Expansion Breakdown Bearish Swing Setup
2020-01-17 DGLY Stochastic Buy Signal Bullish
2020-01-17 DGLY Volume Surge Other
2020-01-17 FORM Expansion Breakout Bullish Swing Setup
2020-01-17 FORM New 52 Week Closing High Bullish
2020-01-17 FORM New 52 Week High Strength
2020-01-17 INTC Bollinger Band Squeeze Range Contraction
2020-01-17 INTC 20 DMA Support Bullish
2020-01-17 LSCC Pocket Pivot Bullish Swing Setup
2020-01-17 LSCC Expansion Breakout Bullish Swing Setup
2020-01-17 LSCC New 52 Week Closing High Bullish
2020-01-17 LSCC Wide Range Bar Range Expansion
2020-01-17 LSCC Volume Surge Other
2020-01-17 LSCC New 52 Week High Strength
2020-01-17 SIMO Boomer Buy Setup Bullish Swing Setup
2020-01-17 SIMO Non-ADX 1,2,3,4 Bullish Bullish Swing Setup
2020-01-17 SIMO 1,2,3 Pullback Bullish Bullish Swing Setup
2020-01-17 SIMO Bollinger Band Squeeze Range Contraction
2020-01-17 SIMO Stochastic Reached Oversold Weakness
2020-01-17 SIMO Fell Below 20 DMA Bearish
2020-01-17 TER Upper Bollinger Band Walk Strength
2020-01-17 TER Bollinger Band Squeeze Range Contraction
2020-01-17 TER Narrow Range Bar Range Contraction
2020-01-17 TER NR7 Range Contraction

Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.
Toshiba developed flash memory from EEPROM (electrically erasable programmable read-only memory) in the early 1980s and introduced it to the market in 1984. The two main types of flash memory are named after the NAND and NOR logic gates. The individual flash memory cells exhibit internal characteristics similar to those of the corresponding gates.
While EPROMs had to be completely erased before being rewritten, NAND-type flash memory may be written and read in blocks (or pages) which are generally much smaller than the entire device. NOR-type flash allows a single machine word (byte) to be written – to an erased location – or read independently.
The NAND type is found primarily in memory cards, USB flash drives, solid-state drives (those produced in 2009 or later), and similar products, for general storage and transfer of data. NAND or NOR flash memory is also often used to store configuration data in numerous digital products, a task previously made possible by EEPROM or battery-powered static RAM. One key disadvantage of flash memory is that it can only endure a relatively small number of write cycles in a specific block.Example applications of both types of flash memory include personal computers, PDAs, digital audio players, digital cameras, mobile phones, synthesizers, video games, scientific instrumentation, industrial robotics, and medical electronics. In addition to being non-volatile, flash memory offers fast read access times, although not as fast as static RAM or ROM. Its mechanical shock resistance helps explain its popularity over hard disks in portable devices, as does its high durability, ability to withstand high pressure, temperature and immersion in water, etc.Although flash memory is technically a type of EEPROM, the term "EEPROM" is generally used to refer specifically to non-flash EEPROM which is erasable in small blocks, typically bytes. Because erase cycles are slow, the large block sizes used in flash memory erasing give it a significant speed advantage over non-flash EEPROM when writing large amounts of data. As of 2013, flash memory costs much less than byte-programmable EEPROM and had become the dominant memory type wherever a system required a significant amount of non-volatile solid-state storage.

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